7 f o 1 e g a p 0 0 . 2 . v e r 0 0 2 0 j e 3 3 0 0 s d 9 0 r jul 04, 2 0 1 2 t he mark < r> s ho w s major rev is ed point s. t he revised point s can be easily s earched b y cop y i ng an "" in t h e pdf f ile and sp ecif y i ng it in t he " f ind w hat:" f ield. t e e h s a t a d ne5550279a silicon power ldmos fet fea t ure s ? hig h out put p o we r : p out = 3 3 . 0 d b m t y p. ( v d s = 7. 5 v , i dset = 40 m a , f = 460 m h z, p i n = 15 dbm ) ? high powe r a d ded efficiency : add = 68% typ. ( v ds = 7.5 v , i dset = 40 m a , f = 460 mh z, p in = 15 db m ) ? high l i n ear g a i n : g l = 22. 5 d b t y p . ( v d s = 7 . 5 v, i dset = 40 m a , f = 460 m h z, p i n = 0 d b m ) ? high esd t o leran ce ? suitable fo r v h f t o uh f-b a n d class - a b p o we r am plifier. applications ? 1 5 0 m h z b a n d r a d i o s y s t e m ? 4 6 0 m h z b a n d r a d i o s y s t e m ? 9 0 0 m h z b a n d r a d i o s y s t e m ordering information pa rt numbe r orde r numbe r pack a g e marki ng supply i ng for m ne55 502 79a ne55 502 79a- a 79a (pb f ree) w 7 ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ne55 502 79a- t 1 ne55 502 79a- t 1-a ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ? qty 1 k p cs/reel n e 5 5 502 79a - t 1 a n e 5 5 502 79a - t 1 a - a ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ? qty 5 k p cs/reel rema r k t o order evalu a tion sam p les, pleas e contact y o ur n e arb y s a les o ffice. pa rt number fo r sa mple o rd e r: n e555 027 9 a-a absolute maxim u m ratings (t a = 25 c, unless otherw ise specified) o p eration in e x cess of a n y o n e o f t h ese p a r a m eters m ay resu lt i n p er m a n e n t d am ag e. para mete r symbol ratings unit drain to s o urc e voltag e v d s 30 v gate to source voltage v g s 6 .0 v i t n e r r u c n i a r d d s 0 .6 a drain c u rrent (50% dut y p u l sed) i d s - pul s e 1 .2 a t o tal p o w e r d i ssipati o n note p t o t 6.25 w chan n e l t e m per a t u r e t c h 150 c storage t e mperature t s t g ? 55 to + 150 c note: value at t c = 2 5 c ca utio n observe p r e c aution s wh en handlin g be cause these d evi ce s are se nsitive to electrostati c disch arg e. r09 d s0 033e j02 00 rev.2.00 jul 04, 20 12 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne5550279a r09ds0033ej0200 rev.2.00 page 2 of 7 jul 04, 2012 recommended operating range (t a = 25 c) parameter symbol test conditions min. typ. max. unit drain to source voltage v ds ? 7.5 9.0 v gate to source voltage v gs 1.65 2.20 2.85 v drain current i ds ? 0.4 ? a input power p in f = 460 mhz, v ds = 7.5 v ? 15 20 dbm electrical characteristics (t a = 25 c, unless otherwise specified) parameter symbol test conditions min. typ. max. unit dc characteristics gate to source leakage current i gss v gs = 6.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 25 v ? ? 10 a gate threshold voltage v th v ds = 7.5 v, i ds = 1.0 ma 1.15 1.65 2.25 v drain to source breakdown voltage bv dss i ds = 10 a 25 38 ? v transconductance g m v ds = 7.5 v, i ds = 140 20 ma 0.36 0.44 0.58 s thermal resistance r th channel to case ? 20.0 ? c/w rf characteristics output power p out f = 460 mhz, v ds = 7.5 v, 31.5 33.0 ? dbm drain current i ds p in = 15 dbm, ? 0.38 ? a power drain efficiency d i dset = 40 ma (rf off) ? 70 ? % power added efficiency add ? 68 ? % linear gain g l note ? 22.5 ? db note: p in = 0 dbm remark dc performance is 100% testing. rf performanc e is testing several samples per wafer. wafer rejection criteria for standard dev ices is 1 reject for several samples. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550279a r09ds0033ej0200 rev.2.00 page 3 of 7 jul 04, 2012 test circuit schematic for 460 mhz c20 c10 l2 l3 l4 in out c22 c11 c13 c21 c12 c14 c1 vds c1 l1 r1 vgs fet ne5550279a 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm188b31c105ka92 murata c10 22 pf grm1882c1h220ja01 murata c11 1.2 pf atc100a1r2jw american technical ceramics c12 4.7 pf atc100a4r7bw american technical ceramics c13 15 pf atc100a150bw american technical ceramics c14 12 pf atc100a120bw american technical ceramics c20 10 pf atc100a100jw american technical ceramics c21 3.9 pf atc100a3r9bw american technical ceramics c22 100 pf atc100a101jw american technical ceramics r1 2 k 1/10 w chip resistor koa rk73b1jttd202j l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou l2 10 nh lqw18an10ng00 murata l3 9.8 nh 0.4 mm, d = 1.6 mm, 3 turns ohesangyou l4 20 nh 0.5 mm, d = 3 mm, 2 turns ohesangyou pcb ? r4775, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka component layout of t est circuit for 460 mhz l1 c1 c1 l2 c10 l3 l4 c22 c20 c12 c14 c11 c21 r1 c13 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550279a r09ds0033ej0200 rev.2.00 page 4 of 7 jul 04, 2012 typical characteristics 1 (t a = 25 c) r: f = 460 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ? 10 to 20 dbm im: f1 = 460 mhz, f2 = 461 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p out (2 tone) = 8 to 32 dbm 40 25 0.1 0 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ?10 ?5 10 15 0 5 25 20 30 35 ?15 ?10 ?5 0 5 10 15 20 p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9.0 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9.0 v i ds - 7.5 v 40 25 10 0 80 20 30 40 50 60 70 0 5 10 15 20 25 30 35 ?15 ?10 ?5 0 5 10 15 20 g p - 3.6 v g p - 4.5 v g p - 6.0 v g p - 7.5 v g p - 9.0 v add - 3.6 v add - 6.0 v add - 4.5 v add - 9.0 v add - 7.5 v ?70 0 ?10 ?20 ?30 ?40 ?50 ?60 ?70 0 ?10 ?20 ?30 ?40 ?50 ?60 40 302520 51015 35 35302520 51015 2f 0 - 3.6 v 2f 0 - 4.5 v 2f 0 - 6.0 v 2f 0 - 7.5 v 2f 0 - 9.0 v 3f 0 - 3.6 v 3f 0 - 6.0 v 3f 0 - 4.5 v 3f 0 - 9.0 v 3f 0 - 7.5 v im 3 - 3.6 v im 3 - 4.5 v im 3 - 6.0 v im 3 - 7.5 v im 3 - 9.0 v im 5 - 3.6 v im 5 - 6.0 v im 5 - 4.5 v im 5 - 9.0 v im 5 - 7.5 v 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (2 tone) (dbm) output power p out (dbm) drain current i ds (a) input power p in (dbm) power gain g p (db) power added efficiency add (%) input power p in (dbm) 2nd harmonics 2f 0 (dbc) 3rd harmonics 3f 0 (dbc) output power p out (dbm) im 3 /im 5 vs. 2 tones output power 2f 0 , 3f 0 vs. output power output power, drain current vs. input power power gain, power added efficiency vs. input power remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550279a r09ds0033ej0200 rev.2.00 page 5 of 7 jul 04, 2012 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550279a r09ds0033ej0200 rev.2.00 page 6 of 7 jul 04, 2012 package dimensions 79a (unit: mm) 0.90.2 0.20.1 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain w 7 27001 79a package recommended p.c.b. layout (unit: mm) 1.7 4.0 0.5 1.0 5.9 1.2 gate source drain 0.5 6.1 0.5 through hole: 0.2 33 stop up the hole with a rosin or something to avoid solder flow. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550279a r09ds0033ej0200 rev.2.00 page 7 of 7 jul 04, 2012 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (pack age surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne5550279a data sheet description rev. date page summary 1.00 mar 28, 2012 first edition issued 2.00 jul 04, 2012 p.2 modification of electrical characteristics
|
